Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology

被引：5

作者：

Chen, SH ^{[1
]}

Ker, MD ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Nanoelect & Gigascale Syst Lab, Hsinchu, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2005.07.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The distance between active region and the seal-ring location has been investigated in a 0.25 mu m CMOS process. From the experimental results, this distance can be shrunk to only 5 pm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT). (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1311 / 1316

页数：6

共 24 条

[1] A 0.25-μm CMOS OPLL transmitter IC for GSM and DCS applications
Su, PU
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) : 462 - 471
[2] Modular SiGeBiCMOS device exploits 0.25-μm CMOS technology
Bindra, A
ELECTRONIC DESIGN, 2000, 48 (01) : 25 - 26
[3] A digital receiver architecture for bluetooth in 0.25-μm CMOS technology and beyond
Neubauer, Andre
Hammes, Markus
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2007, 54 (09) : 2044 - 2053
[4] A merged 2.5 V and 3.3 V 0.25-μm CMOS technology
Kizilyalli, IC
Huang, R
Hwang, D
Kane, B
Ashton, R
Kuehne, S
Deng, X
Twifford, M
Martin, E
Shuttleworth, D
Wittingham, K
Lytle, S
Roy, P
Olmer, L
Vaidya, H
Li, F
Li, X
Persson, E
Massengale, A
Stirling, L
Chesire, D
Steiner, K
Barba, R
Thoma, MJ
Cochran, WT
MICROELECTRONIC DEVICE TECHNOLOGY II, 1998, 3506 : 175 - 181
[5] Design and benchmarking of BCPMOS versus SCPMOS for an evolutionary 0.25-μm CMOS technology
Vuong, HH
Eshraghi, SA
Rafferty, CS
Hillenius, SJ
Pinto, MR
Diodato, PW
Cong, HI
Zeitzoff, PM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) : 991 - 993
[6] CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology
Wong, HSP
Chang, RT
Crabbe, E
Agnello, PD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) : 889 - 894
[7] 5.5-V I/O in a 2.5-V 0.25-μm CMOS technology
Annema, AJ
Geelen, GJGM
de Jong, PC
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (03) : 528 - 538
[8] A high-voltage output driver in a 2.5-v 0.25-μm CMOS technology
Serneels, B
Piessens, T
Steyaert, M
Dehaene, W
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (03) : 576 - 583
[9] CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl μ/m CMOS technology
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, United States
不详
IEEE Trans. Electron Devices, 4 (889-894):
[10] BiCMOS technology with 60-GHz n-p-n bipolar and 0.25-μm CMOS
Warnock, James
Shahidi, Ghavam G.
Davari, Bijan
Wu, Benjamin
Taur, Yuan
Wong, C.
Jenkins, K.
Chen, Chih-Liang
1600, (13):

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