Broadband ESD protection circuits in CMOS technology

被引：98

作者：

Galal, S ^{[1
]}

Razavi, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 12期

关键词：

broadband amplifiers; high-speed ESD protection; impedance matching; T-coils; T-coil peaking;

D O I：

10.1109/JSSC.2003.818568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband technique using monolithic T-coils is applied to electrostatic discharge (ESD) structures for both input and output pads. Fabricated in 0.18-mum CMOS technology, the prototypes achieve operation at 10 Gb/s while providing a return loss of -20 dB at 10 GHz. The human-body model tolerance is 1000 V for the input structure and 800-900 V for the output structure.

引用

页码：2334 / 2340

页数：7

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