Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

被引:30
作者
Chakrabarti, Somsubhra [1 ]
Panja, Rajeswar [1 ]
Roy, Sourav [1 ]
Roy, Anisha [1 ]
Samanta, Subhranu [1 ]
Dutta, Mrinmoy [1 ]
Ginnaram, Sreekanth [1 ]
Maikap, Siddheswar [1 ,2 ]
Cheng, Hsin-Ming [3 ]
Tsai, Ling-Na [3 ]
Chang, Ya-Ling [4 ]
Mahapatra, Rajat [5 ]
Jana, Debanjan [1 ]
Qiu, Jian-Tai [2 ]
Yang, Jer-Ren [4 ]
机构
[1] Chang Gung Univ, Dept Elect Engn, Thin Film Nano Tech Lab, 259 Wen Hwa 1st Rd, Taoyuan 33302, Taiwan
[2] CGMH, Dept Obs Gyn, Div Gyn Oncol, Taoyuan 33302, Taiwan
[3] ITRI, Mat & Chem Res Labs MRL, Hsinchu 310, Taiwan
[4] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan
[5] NIT, Dept Elect & Commun Engn, Durgapur 713209, India
关键词
TaOx switching material; H2O2; sensing; Al2O3; layer; WOx membrane; Simulation; Switching mechanism; ELECTROCHEMICAL DETECTION; CONDUCTIVE FILAMENT; GRAPHENE OXIDE; MEMORY DEVICE; NANOPARTICLES; FILMS; TRANSPORT; THICKNESS; BEHAVIOR; LAYERS;
D O I
10.1016/j.apsusc.2017.10.072
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Understanding of resistive switching mechanism through H2O2 sensing and improvement of switching characteristics by using TaOx-based material in W/Al2O3/TaOx/TiN structure have been reported for the first time. Existence of amorphous Al2O3/TaOx layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta2+/Ta5+ for TaOx switching material and W-0/W6+ for WOx layer at the W/TaOx interface through X-ray photoelectron spectroscopy and H2O2 sensing,sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaOx layer for the W/Al2O3/TaOx/TiN structures. This leads to higher Schottky barrier height at the W/Al2O3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >10(8) cycles with 100 ns pulse width at a low operation current of 30 mu A. Stable retention of more than 10(4) s at 85 degrees C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaOx and WOx membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H2O2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al2O3 membrane does not show sensing. The TaOx material in W/Al2O3/TaOx/TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H2O2 sensors. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:51 / 59
页数:9
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