Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

被引:12
作者
Yan, Jiawei [1 ,2 ,3 ]
Wang, Shizhuo [4 ]
Xia, Ke [5 ,6 ]
Ke, Youqi [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Zhengzhou Univ Light Ind, Coll Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China
[5] Beijing Normal Univ, Ctr Adv Quantum Studies, Beijing 100875, Peoples R China
[6] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
关键词
ROOM-TEMPERATURE; MAGNETORESISTANCE; TORQUE;
D O I
10.1103/PhysRevB.97.014404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.
引用
收藏
页数:5
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