Thin-film ferroelectric microwave devices

被引：214
作者：
Lancaster, MJ [1 ]
Powell, J [1 ]
Porch, A [1 ]
机构：
[1] Univ Birmingham, Sch Elect & Elect Engn, Birmingham B15 2TT, W Midlands, England
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1998年 / 11卷 / 11期
关键词：
D O I：
10.1088/0953-2048/11/11/021
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
When an electric field is applied to a ferroelectric material, the microwave permittivity undergoes a substantial change. This change in permittivity can be utilized in microwave devices to produce frequency-agile functions. This paper is a comprehensive review of the work on ferroelectric materials; this includes models of the ferroelectric permittivity and loss tangent, as well as methods of measurement of these properties. New measurements are presented on thin-film strontium titanate and single-crystal strontium barium titanate substrates. These results are compared with the model. A brief discussion is given of the applications of ferroelectric material in microwave devices.
引用
收藏
页码：1323 / 1334
页数：12
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