Carrier transport and recombination in a-Si:H p-i-n solar cells in dark and under illumination

被引：0

作者：

Deng, J ^{[1
]}

Pearce, JM ^{[1
]}

Vlahos, V ^{[1
]}

Koval, RJ ^{[1
]}

Collins, RW ^{[1
]}

Wronski, CR ^{[1
]}

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA

来源：

AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003 | 2003年 / 762卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A study has been carried out on the forward bias dark current and the short circuit current open circuit voltage characteristics of a-Si:H p-i-n solar cells over wide range of illumination intensities. Results are presented with superposition of these characteristics over extended current voltage regimes. This and the observed separation between these characteristics are consistent with the arguments presented based on first principle arguments. The conclusions drawn about the role of photo-generated carrier lifetimes, the densities of defects and the potential barriers in the i-layers adjacent to the n and p contacts are confirmed by numerical simulations. The key role of these potential barriers to the split in the characteristics offer new insight into both why the lack of superposition has been observed and the erroneous conclusions drawn about carrier transport for a-Si:H solar cells in the dark and under illumination.

引用

页码：303 / 308

页数：6

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