Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi4Ti3O12 thin films

被引：66

作者：

Zhang, ST ^{[1
]}

Zhang, XJ

Cheng, HW

Chen, YF

Liu, ZG

Ming, NB

Hu, XB

Wang, JY

机构：

[1] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 21期

关键词：

D O I：

10.1063/1.1629372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality c-axis epitaxial ferroelectric thin films of Bi4Ti3O12 (BTO) and Nd-substituted BTO, Bi3.15Nd0.85Ti3O12 (BNT), were prepared on (001)-LaNiO3-coated (001) LaAlO3 substrates by pulsed-laser deposition. The epitaxial alignments were established by the x-ray diffraction, including theta-2theta and phi scans. Compared to the BTO films, the BNT films have significantly improved electrical properties with about 2 times larger remanent polarization, 0.6 times lower coercive field, better fatigue-resisting characteristics, and 1.7 times larger dielectric constant. These results showed experimentally that Nd substitution could enhance the c-axis electrical properties of BTO. The reason for the improved properties of BNT films was discussed. (C) 2003 American Institute of Physics.

引用

页码：4378 / 4380

页数：3

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