Improved optical confinement in ambipolar field-effect transistors toward electrical injection organic lasers

被引:1
作者
Li, Yun [1 ,2 ]
Sabatini, Randy P. [1 ,2 ]
Prasad, Shyamal K. K. [3 ]
Hockings, Evan T. [1 ]
Schmidt, Timothy W. [3 ]
Lakhwani, Girish [1 ,2 ]
机构
[1] Univ Sydney, ARC Ctr Excellence Exciton Sci, Sch Chem, Sydney, NSW 2006, Australia
[2] Univ Sydney, Inst Photon & Opt Sci, Sydney, NSW 2006, Australia
[3] Univ New South Wales, ARC Ctr Excellence Exciton Sci, Sch Chem, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
TRANSPORT;
D O I
10.1063/5.0063336
中图分类号
O59 [应用物理学];
学科分类号
摘要
Increasing optical confinement is critical to lowering laser thresholds and increasing modal gain in semiconductor lasers. Here, mode-solver calculations are used to demonstrate that improvements to optical confinement are possible in organic field-effect transistor geometries by using high refractive index cladding layers. Optical experiments show that the proposed structure increases the efficiency of amplified spontaneous emission (ASE) and lowers ASE thresholds without incurring additional losses. The results suggest that the structure can be used to improve optical confinement for both optically pumped and electrical injection organic lasers where thin, low refractive index active materials are required.
引用
收藏
页数:6
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