PtSi Schottky-barrier infrared focal plane arrays

被引:2
|
作者
Kimata, M [1 ]
Ozeki, T [1 ]
Tsubouchi, N [1 ]
Ito, S [1 ]
机构
[1] Mitsubishi Elect Co, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan
来源
IMAGING SYSTEMS TECHNOLOGY FOR REMOTE SENSING | 1998年 / 3505卷
关键词
FPA; PtSi; Schottky-barrier; MWIR; SWIR;
D O I
10.1117/12.317841
中图分类号
TP7 [遥感技术];
学科分类号
081102 ; 0816 ; 081602 ; 083002 ; 1404 ;
摘要
PtSi Schottky-barrier (SB) FPAs have been developed for ground-based thermal imaging and spaceborne remote sensing applications, making the best possible use of its process compatibility with Si LSIs. The FPAs for mid wavelength infrared (MWIR: 3 - 5 mu m) thermal imaging are large format 2-D arrays with several array sizes up to 1040x1040. An original readout architecture called the Charge Sweep Device (CSD) has contributed to enhancing their sensitivities, and our state-of-the-art technology has reached a level which realizes FPAs with NETDs of the order of 30 mK. Extending the SE FPA technology to the short wavelength infrared (SWIR: 1 - 3 mu m) spectral region has made it possible to exploit spaceborne remote sensing applications. The space-grade performance and reliability have been demonstrated with a 4096 element and 2100 element linear FPAs.
引用
收藏
页码:2 / 12
页数:11
相关论文
共 50 条
  • [21] Interface electronic structure and Schottky-barrier height in Si/NiSi(010) and Si/PtSi(010) heterostructures: A first-principles theoretical study
    Niranjan, Manish K.
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 100 : 808 - 817
  • [22] The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector
    Horng, GJ
    Chang, CY
    Ho, C
    Lee, CY
    Huang, TY
    THIN SOLID FILMS, 2000, 374 (01) : 80 - 84
  • [23] Pore size dependence of PtSi/Porous Si Schottky barrier detectors on quantum efficiency response
    Mehrara, Hamed
    Erfanian, Alireza
    Khaje, Mandi
    Zahedinejad, Mohammad
    Raissi, Farshid
    Rezvani, Farshad
    SENSORS AND ACTUATORS A-PHYSICAL, 2012, 184 : 119 - 123
  • [24] Numerical Modeling of Extended Short Wave Infrared InGaAs Focal Plane Arrays
    Glasmann, Andreu
    Wen, Hanqing
    Bellotti, Enrico
    INFRARED TECHNOLOGY AND APPLICATIONS XLII, 2016, 9819
  • [25] Quantification and Modeling of RMS Noise Distributions in HDVIP® Infrared Focal Plane Arrays
    Roger L. Strong
    Michael A. Kinch
    Journal of Electronic Materials, 2014, 43 : 2824 - 2830
  • [26] Large format SWIR/MWIR HgCdTe infrared focal plane arrays for astronomy
    Vural, K
    Kozlowski, LJ
    Cabelli, C
    Cabelli, SA
    Chen, AC
    Cooper, DE
    Bostrup, G
    Bailey, RB
    Edwall, DE
    Arias, JM
    Stanley, GA
    Price, GG
    Pinter, JA
    Kleinhans, WE
    Hodapp, K
    Hall, D
    INFRARED DETECTORS AND FOCAL PLANE ARRAYS V, 1998, 3379 : 562 - 571
  • [27] MTF and FPN measurements to evaluate midwave infrared T2SL focal plane arrays
    Nghiem, Jean
    Jaeck, Julien
    Giard, Edouard
    Caes, Marcel
    Rodriguez, Jean-Baptiste
    Christol, Philippe
    Haidar, Riad
    Costard, Eric
    Ribet-Mohamed, Isabelle
    QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, 10111
  • [28] High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
    Lin, HC
    Wang, MF
    Hou, FJ
    Lin, HN
    Lu, CY
    Liu, JT
    Huang, TY
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (02) : 102 - 104
  • [29] The,Role of the mercury-Si Schottky-barrier height in ψ-MOSFETs
    Choi, JY
    Ahmed, S
    Dimitrova, T
    Chen, JTC
    Schroder, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (07) : 1164 - 1168
  • [30] The role of the mercury-Si Schottky-barrier height in ψ-MOSFETs
    Choi, JY
    Ahmed, S
    Dimitrova, T
    Chen, JTC
    Schroder, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (09) : 1380 - 1384