Strongly confined, low-threshold laser modes in organic semiconductor microgoblets

被引：22

作者：

Grossmann, Tobias ^{[1
,2
]}

Klinkhammer, Soenke ^{[2
,3
]}

Hauser, Mario ^{[1
]}

Floess, Dominik ^{[1
]}

Beck, Torsten ^{[1
]}

Vannahme, Christoph ^{[2
,3
]}

Mappes, Timo ^{[2
]}

Lemmer, Uli ^{[3
]}

Kalt, Heinz ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Appl Phys, D-76128 Karlsruhe, Germany

[2] Karlsruhe Inst Technol, Inst Microstruct Technol, D-76128 Karlsruhe, Germany

[3] Karlsruhe Inst Technol, Light Technol Inst, D-76128 Karlsruhe, Germany

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 10期

关键词：

SILICON; SIMULATION;

D O I：

10.1364/OE.19.010009

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate lasing from high-Q, polymeric goblet-type microcavities covered by an organic semiconductor gain layer. We analyze the optical modes in the high-Q cavities using finite element simulations and present a numerical method to determine the cutoff thickness of the gain layer above which the whispering gallery modes are strongly confined in this layer. Fabricated devices show reduced lasing thresholds for increasing gain layer thicknesses, which can be explained by a higher filling factor of the optical modes in the gain layer. Furthermore, reduced lasing threshold is accompanied by a red-shift of the laser emission. (C) 2011 Optical Society of America

引用

页码：10009 / 10016

页数：8

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