Quantitative analysis of surface donors in ZnO

被引：43
作者：
Look, D. C. [1 ,2 ]
机构：
[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
[2] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
来源：
SURFACE SCIENCE | 2007年 / 601卷 / 23期
基金：
美国国家科学基金会;
关键词：
zinc oxide; hall-effect; temperature dependence; surface conductivity; donors; acceptors;
D O I：
10.1016/j.susc.2007.09.030
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
At low temperatures, typically up to 30 K or even higher, the electrical properties of bulk ZnO samples are nearly always dominated by a conductive near-surface region. Here we show that a single, low-temperature Hall-effect measurement, say at 20 K, and a reasonable assumption regarding the upper limit of the surface compensation ratio, yields a value of surface donor concentration N-D,N-surf accurate to within about a factor two. Examples are given for bulk materials grown by the vapor-phase, melt, and hydrothermal processes. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：5315 / 5319
页数：5
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