Patterning with block copolymer thin films

被引:890
作者
Segalman, RA [1 ]
机构
[1] Univ Calif Berkeley, Dept Chem Engn, Div Sci Mat, Lawrence Berkeley Labs, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
block copolymers; nanopatterning; thin films; microphase separation; polymer self-assembly; block copolymer lithography;
D O I
10.1016/j.mser.2004.12.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nanometer-scale architectures in thin films of self-assembling block copolymers have inspired a variety of new applications. For example, the uniformly sized and shaped nanodomains formed in the films have been used for nanolithography, nanoparticle synthesis, and high-density information storage media. Imperative to all of these applications, however, is a high degree of control over orientation of the nanodomains relative to the surface of the film as well as control over order in the plane of the film. Induced fields including electric, shear, and surface fields have been demonstrated to influence orientation. Both heteroepitaxy and graphoepitaxy can induce positional order on the nanodomains in the plane of the film. This article will briefly review a variety of mechanisms for gaining control over block copolymer order as well as many of the applications of these materials. Particular attention is paid to the potential of perfecting long-range two-dimensional order over a broader range of length scales and the extension of these concepts to functional materials and more complex architectures. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:191 / 226
页数:36
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