2.33 μm-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE

被引：24
|
作者：
Sato, T. [1 ]
Mitsuhara, M. [1 ]
Kondo, Y. [1 ]
机构：
[1] NTT Corp, NTT Photon Labs, 3-1 Morinosato Wakamiya, Kanagawa 2430198, Japan
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 21期
关键词：
D O I：
10.1049/el:20072257
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An emission wavelength of 2.33 ltln in an InAs/InGaAs multiplequantum-well laser grown by metal-organic vapour phase epitaxy is reported. The laser had an output power above 10 mW under continuous-wave operation at temperatures between 15 and 45 C. High-temperature operation up to 50 C and a characteristic temperature of 51 K were also confirmed.
引用
收藏
页码：1143 / 1145
页数：3
相关论文
共 50 条
  • [1] MOVPE-grown InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm
    Sato, Tomonari
    Mitsuhara, Manabu
    Kakitsuka, Takaaki
    Kondo, Yasuhiro
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 380 - 383
  • [2] 2.33-μm-wavelength InAs/InGaAs MQW DFB lasers grown by MOVPE
    Sato, T.
    Mitsuhara, M.
    Nunoya, N.
    Kasaya, K.
    Kano, F.
    Takeshita, T.
    Kondo, Y.
    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 697 - 698
  • [3] 2.1 μm-wavelength InGaAs multiple-quantum-well distributed feedback lasers grown by MOVPE using Sb surfactant
    Sato, Tomonari
    Mitsuhara, Manabu
    Watanabe, Takao
    Kasaya, Kazuo
    Takeshita, Tatsuya
    Kondo, Yasuhiro
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (05) : 1079 - 1083
  • [4] 2.33-μm-wavelength distributed feedback lasers with InAs-In0.53Ga0.47As multiple-quantum wells on InP substrates
    Sato, T.
    Mitsuhara, M.
    Nunoya, N.
    Fujisawa, T.
    Kasaya, K.
    Kano, E.
    Kondo, Y.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (9-12) : 1045 - 1047
  • [5] InAs/InGaAs MQW lasers emitting at 2.3 μm grown by MOVPE
    Sato, Tomonari
    Mitsuhara, Manabu
    Kondo, Yasuhiro
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 609 - 613
  • [6] 2.1-μm wavelength strained InGaAs multiple-quantum-well lasers grown by metalorganic vapor phase epitaxy assisted by Sb surfactant
    Sato, T
    Mitsubara, M
    Watanabe, T
    Kasaya, K
    Kondo, Y
    2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, 2005, : 370 - 371
  • [7] Fabrication of a 1.3-mu m-wavelength multiple-quantum-well laser on a (211)A InP substrate
    Okuno, Y
    Tsuchiya, T
    Okai, M
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 567 - 570
  • [8] InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ 2.38 μm
    Shih, DK
    Lin, HH
    Lin, YH
    ELECTRONICS LETTERS, 2001, 37 (22) : 1342 - 1343
  • [9] MORPHOLOGICAL CHARACTERIZATION OF INALAS/INAS AND INALAS/INGAAS MULTIPLE-QUANTUM-WELL STRUCTURES GROWN ON INP SUBSTRATES
    PEIRO, F
    CORNET, A
    MORANTE, JR
    CLARK, SA
    WILLIAMS, RH
    MATERIALS LETTERS, 1993, 15 (5-6) : 363 - 369
  • [10] Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE
    Su, Y. K.
    Chen, W. C.
    Wan, C. T.
    Yu, H. C.
    Chuang, R. W.
    Tsai, M. C.
    Cheng, K. Y.
    Hu, C.
    Tsau, Seth
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (15) : 3615 - 3620
12345