Spatial Atmospheric Atomic Layer Deposition of InxGayZnzO for Thin Film Transistors

被引：54

作者：

Illiberi, A. ^{[1
]}

Cobb, B. ^{[1
]}

Sharma, A. ^{[1
]}

Grehl, T. ^{[2
]}

Brongersma, H. ^{[2
,3
]}

Roozeboom, F. ^{[1
,3
]}

Gelinck, G. ^{[1
]}

Poodt, P. ^{[1
]}

机构：

[1] Holst Ctr TNO, NL-5600 AE Eindhoven, Netherlands

[2] ION TOF GmbH, D-48149 Munster, Germany

[3] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 06期

关键词：

atomic layer deposition; atmospheric pressure; thin film transistors; indium gallium zinc oxide; amorphous semiconductors; nucleation; AMORPHOUS OXIDE SEMICONDUCTOR; ELECTRONIC-STRUCTURE; CARRIER TRANSPORT; HIGH-MOBILITY; TRANSPARENT; GROWTH; OXYGEN; IN2O3;

D O I：

10.1021/am508071y

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied.

引用

页码：3671 / 3675

页数：5

共 38 条

[1] Surface composition analysis by low-energy ion scattering [J].