Microstructural characterization of electroconductive Si3N4-TiN composites

被引：34

作者：

Lee, BT

Yoon, YJ

Lee, KH

机构：

[1] Kongju Natl Univ, Div Adv Mat Engn, Kong Ju 314701, South Korea

[2] Chungnam Natl Univ, Div Adv Mat Engn, Taejon 305764, South Korea

来源：

MATERIALS LETTERS | 2001年 / 47卷 / 1-2期

基金：

新加坡国家研究基金会;

关键词：

silicon nitride; titanium nitride; composite; microstructure;

D O I：

10.1016/S0167-577X(00)00214-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electroconductive Si3N4-TiN composites from Si and TiN powders have been fabricated by in situ reaction-bonding and post-sintering under N-2 atomosphere. The values of fracture strength and electrical resistivity in the Si3N4-50 wt.% TiN composite were 531 MPa and 2.5 x 10(-2) Omega cm, respectively. The dispersion of TiN particles inhibited the abnormal growth of rod-like Si3N4 grains with large size in diameter. An amorphous phase observed in most grain boundaries and triple points is attributed to liquid phase sintering. Many dislocations formed by the difference of thermal expansion coefficients were observed in Si3N4 and TiN grains. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：71 / 76

页数：6

共 10 条

[1]

Bellosi A., 1992, Journal of the European Ceramic Society, V9, P83, DOI 10.1016/0955-2219(92)90049-J

[2] Liquid-phase sintering and properties of Si3N4-TiN composites [J].