Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics

被引：48

作者：

Wan, Q

Zhang, NL

Liu, WL

Lin, CL

Wang, TH

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.1589196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-insulator-semiconductor (MIS) structures containing Ge nanocrystals embedded in high permittivity dielectrics (ZrO2/Al2O3) are fabricated by electron-beam evaporation method. Capacitance-voltage (C-V) and I-V characteristics of the fabricated MIS structures are investigated in the dark and under illumination. Charge storing and negative photoconductivity effects of the Ge nanocrystals are experimentally demonstrated by the hysteresis in the C-V curves and the decrease of the current under illumination at a given voltage, respectively. (C) 2003 American Institute of Physics.

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页码：138 / 140

页数：3

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