A PARAMETRIC STUDY OF THE IMPACT OF ENERGY RELAXATION TIME ON THERMAL BEHAVIOR OF POWER SI MOSFET IN ELECTRO-THERMAL ANALYSIS

被引：0

作者：

Kibushi, Risako ^{[1
]}

Hatakeyama, Tomoyuki ^{[1
]}

Nakagawa, Shinji ^{[1
]}

Ishizuka, Masaru ^{[1
]}

机构：

[1] Toyama Prefectural Univ, Imizu, Toyama, Japan

来源：

INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS, 2015, VOL 1 | 2015年

关键词：

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

This paper describes the effect of variation of energy relaxation time on temperature distribution of power Si MOSFET in electro-thermal analysis. In previous our studies, thermal properties of power Si MOSFET are evaluated using electro-thermal analysis. However, in our previous calculation, energy relaxation time has been assumed to be constant at 0.3 ps, which is widely used value in electro-thermal analysis. This is because energy relaxation time cannot be calculated by classical physics, and it is difficult to detect exact energy relaxation time. However, energy relaxation time is important for evaluating heat generation in electro-thermal analysis. One method to obtain energy relaxation time is Monte Carlo simulation. In this research, we performed Monte-Carlo simulation, and electrical field and lattice temperature dependencies of energy relaxation time were evaluated. Then, we performed electro-thermal analysis of power Si MOSFET with various energy relaxation times, and the effect of change of energy relaxation time on temperature distribution of power Si MOSFET in electro-thermal analysis was discussed. Energy relaxation time in the range of 0.1 - 1000 kV/cm of electrical field was evaluated in Monte Carlo simulation. The results of Monte-Carlo simulation showed that maximum energy relaxation time becomes about 0.6 ps, and minimum energy relaxation time is about 0.30 ps. Following the results, to investigate the effect of variation of energy relaxation time on temperature distribution of power Si MOSFET, we changed energy relaxation time in electro-thermal analysis, and thermal properties of power Si MOSFET was calculated. The results of electro-thermal. analysis showed that energy relaxation time has an effect on temperature distribution of power Si MOSFET. Therefore, accurate energy relaxation time should be considered in electro-thermal analysis for appropriate temperature distribution of power Si MOSFET.

引用

页数：6

共 10 条

[1] [Anonymous], 1993, Numerical Simulation of Submicron Semiconductor Devices
[2] Cui YT, 2012, APPL POWER ELECT CO, P1698, DOI 10.1109/APEC.2012.6166050
[3] Mesh Zoning Method for Electro-Thermal Analysis of Submicron Si MOSFET
Hatakeyama, Tomoyuki
Fushinobu, Kazuyoshi
Okazaki, Ken
[J]. JOURNAL OF THERMAL SCIENCE AND TECHNOLOGY, 2006, 1 (02): : 101 - 112
[4] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS
JACOBONI, C
REGGIANI, L
[J]. REVIEWS OF MODERN PHYSICS, 1983, 55 (03) : 645 - 705
[5] Kibushi K., 2013, T JPN I ELECT PACKAG, V6, P51, DOI [10.5104/jiepeng.6.51, DOI 10.5104/JIEPENG.6.51]
[6] Kibushi R., 2014, T JPN I ELECT PACKAG, V7, P52, DOI [10.5104/jiepeng.7.52, DOI 10.5104/JIEPENG.7.52]
[7] LALLEMENT C, 1994, ANN TELECOMMUN, V49, P543
[8] Longtin JP, 1998, S CHEM MECH, P119
[9] Numerical simulation and modeling of thermal transient in silicon power devices
Magnone, P.
Fiegna, C.
Greco, G.
Bazzano, G.
Rinaudo, S.
Sangiorgi, E.
[J]. SOLID-STATE ELECTRONICS, 2013, 88 : 69 - 72
[10] Sinha S., 2004, P IMECE2004

← 1 →