Single-Event Burnout Mechanisms in SiC Power MOSFETs

被引：113
|
作者：
Witulski, Arthur F. [1 ]
Ball, Dennis R. [1 ]
Galloway, Kenneth F. [1 ]
Javanainen, Arto [1 ,2 ]
Lauenstein, Jean-Marie [3 ]
Sternberg, Andrew L. [1 ]
Schrimpf, Ronald D. [1 ]
机构：
[1] Vanderbilt Univ, Inst Space & Def Elect, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA
[2] Univ Jyvaskyla, Dept Phys, FI-40014 Jyvaskyla, Finland
[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 08期
基金：
芬兰科学院;
关键词：
Device simulations; heavy ions; power devices; power MOSFETs; silicon carbide (SiC); single-event burnout (SEB); single-event effects; TCAD; SILICON-CARBIDE;
D O I：
10.1109/TNS.2018.2849405
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm(2)/mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.
引用
收藏
页码：1951 / 1955
页数：5
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