Fabrication and Electrical Characterization of Ti/p-Si Metal Semiconductor Schottky Structures at Low Temperature

Temperature-dependent electrical analysis of the Ti/p-Si/Al Schottky barrier diode was performed by measuring the current-voltage (I-V) and capacitance-voltage (C-V) properties over a temperature range of 80-300 K in steps of 20 K. Electrical parameters including the barrier height (Phi(b0)) and ideality factor (n) were calculated according to the thermionic emission (TE) theory. It was determined that the barrier height values increased and the values of the ideality factor decreased with the increase in temperature. The temperature-dependent barrier height properties were explained by considering the barrier height inhomogeneity using a Gaussian distribution. From the 1/2kT versus Phi(b0) graph, which shows the Gaussian distribution, the mean barrier heights and standard deviation were 0.5856 eV and 67 mV (80-160 K) and 1.0443 eV and 129 mV (180-300 K), respectively. The temperature dependence of the Ti/p-Si Schottky barrier diode (SBD) is explained based on the TE mechanism and Gaussian distribution of the barrier heights. In addition, the barrier heights determined from the C-V measurements are higher than the values obtained from the I-V measurements in conjunction with the formation of an inhomogeneous Schottky barrier at the interface.