Effect of B doping concentration on the properties of p-type hydrogenated amorphous silicon thin films

被引：0
|
作者：
Wang, Weiyuan [1 ]
Zhao, Qingnan
Yuan, Wenhui
Yang, Pulei
Liang, Hongyu
Liu, Ying
Dong, Yuhong
机构：
[1] Wuhan Univ Technol, Key Lab Silicate Mat Sci & Engn, Wuhan, Peoples R China
来源：
ADVANCED MATERIALS, PTS 1-4 | 2011年 / 239-242卷
关键词：
Doping concentration; amorphous silicon thin film; conductivity; optical band gap;
D O I：
10.4028/www.scientific.net/AMR.239-242.247
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV-Vis-NIR spectrophotometer in the wavelength range 200-2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B2H6 is 7.82 x 10(-4)S/cm.
引用
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页码：247 / +
页数：3
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