Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

被引:156
作者
Ural, A [1 ]
Griffin, PB [1 ]
Plummer, JD [1 ]
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.370285
中图分类号
O59 [应用物理学];
学科分类号
摘要
An identical set of thermal oxidation and nitridation experiments has been performed for four common dopants and self-diffusion in Si. Selectively perturbing the equilibrium point-defect concentrations by these surface reactions is a powerful tool for identifying the relative importance of the various atomic-scale diffusion mechanisms. We obtain bounds on the fractional contributions of the self-interstitial, vacancy, and concerted exchange mechanisms for arsenic, boron, phosphorus, antimony, and self-diffusion in Si at temperatures of 1100 and 1000 degrees C. These bounds are found by simultaneously solving a system of equations making only very conservative assumptions. The validity of common approximations found in previous work and their effects on the results are also analyzed in detail. We find that B and P diffuse by a self-interstitial mechanism, whereas Sb diffusion is almost exclusively vacancy mediated. As and self-diffusion, on the other hand, exhibit evidence for a dual vacancy-interstitial mechanism with the possibility of some concerted exchange component. (C) 1999 American Institute of Physics. [S0021-8979(99)05109-9].
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收藏
页码:6440 / 6446
页数:7
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