Thin-film field-effect transistors based on La-doped SrTiO3 heterostructures

Field-effect transistors have been fabricated from epitaxial perovskite strontium titanate heterostructures. Lanthanum-doped SrTiO3 was used as the semiconducting channel while insulating SrTiO3 was used as a gate insulator. Both depletion and accumulation effects in the channel have been studied from 300 to 4 K. Hall effect measurements indicate a temperature independent n-type carrier density around 5x10(19) cm(-3). At 300 K, typical mobilities are 2-3 cm(2) V-1 s(-1) while low temperature mobilities are as high as 15 cm(2) V-1 s(-1). (C) 2004 American Institute of Physics.