Chemically amplified fullerene resists for e-beam lithography

The minimum lithographic feature size for microelectronic fabrication continues to shrink, and resist properties are beginning to dominate the achievable resolution. There is a strong need for a high resolution, high sensitivity resist for future nodes that is not met by conventional polymeric resists at this time. Molecular resists, such as fullerene derivatives have the potential for lower LWR and improved resolution, but have typically been insufficiently sensitive to irradiation. Here we present a fullerene based three component chemically amplified resist system with high resolution and sensitivity, and wide process latitude. The sensitivity of this resist is between 5 and 10 mu C/cm(2) at 20 keV for various combinations of post application bake and post exposure bake conditions. Using 30 keV electron beam exposure, sparse patterns with 12 rim resolution were demonstrated, at a line dose of 300 pC/cm, whilst dense patterns with half-pitch 20 nm were achieved at 200 pC/cm. The LWR for the densely patterned resist (measured at 20 nm half pitch) is similar to 4.4 nm, whilst for the 12 nm sparse feature the measured LWR is similar to 2.5 nm. The etch durability is comparable with commercial novolac resists