Dynamics of carrier -capture processes in Ga0.47In0.53As/InP near-surface quantum wells

被引：0
作者：
Symonds, C [1 ]
Mangeney, J [1 ]
Saint-Girons, G [1 ]
Sagnes, I [1 ]
Meunier, K [1 ]
Garnache, A [1 ]
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France
来源：
2005 International Conference on Indium Phosphide and Related Materials | 2005年
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D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ga0.47In0.53As/InP single-quantum wells with thin top barrier layers of InP and InAlAs have been studied by pump-probe experiments and photoluminescence spectroscopy. The excitonic lifetime is reduced by a fast trapping mechanism of carriers into surface states.
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页码：424 / 426
页数：3
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