Resonant-cavity-enhanced photodetectors for the mid-infrared

被引：43

作者：

Arnold, M ^{[1
]}

Zimin, D ^{[1
]}

Zogg, H ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, Thin Film Phys Grp, CH-8005 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期

关键词：

D O I：

10.1063/1.2061855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-efficiency resonant-cavity-enhanced photodetectors for the mid-wavelength infrared range have been realized. Spectral linewidths as narrow as 0.07 mu m at 4.13 mu m and 0.24 mu m at 8.41 mu m center wavelength, respectively, have been achieved. Peak quantum efficiencies are up to above 50%. The photovoltaic devices are based on IV-VI semiconductor layers grown epitaxially on Si substrates and employing a distributed Bragg mirror to form the cavity. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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