Measurement of carrier envelope offset frequency for a 10 GHz etalon-stabilized semiconductor optical frequency comb

被引:11
作者
Akbulut, M. [1 ]
Davila-Rodriguez, J. [1 ]
Ozdur, I. [1 ]
Quinlan, F. [1 ]
Ozharar, S. [1 ]
Hoghooghi, N. [1 ]
Delfyett, P. J. [1 ]
机构
[1] Univ Cent Florida, CREOL Coll Opt & Photon, Orlando, FL 32816 USA
来源
OPTICS EXPRESS | 2011年 / 19卷 / 18期
关键词
WAVE-FORM GENERATION; LASER; PRECISION;
D O I
10.1364/OE.19.016851
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report Carrier Envelope Offset (CEO) frequency measurements of a 10 GHz harmonically mode-locked, Fabry-Perot etalon-stabilized, semiconductor optical frequency comb source. A modified multi-heterodyne mixing technique with a reference frequency comb was utilized for the measurement. Also, preliminary results from an attempt at f-2f self-referencing measurement are presented. The CEO frequency was found to be similar to 1.47 GHz for the particular etalon that was used. (C) 2011 Optical Society of America
引用
收藏
页码:16851 / 16865
页数:15
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