Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

被引：62

作者：

Zan, Hsiao-Wen ^{[1
,2
]}

Tsai, Wu-Wei ^{[1
,2
]}

Chen, Chia-Hsin ^{[1
,2
]}

Tsai, Chuang-Chuang ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 37期

关键词：

dot doping; self-alignment; thin-film transistors;

D O I：

10.1002/adma.201102530

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Applying nanometer dot-like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transport in the a-IGZO film. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4237 / 4242

页数：6

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