High sensitive InP emitter for InP/InGaAs heterostructures

被引：9
|
作者：
Smirnov, K. J. [1 ,2 ]
Medzakovskiy, V. I. [3 ]
Davydov, V. V. [1 ,3 ,4 ]
Vysoczky, M. G. [1 ]
Glagolev, S. F. [3 ]
机构：
[1] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia
[2] OJSC NRI Electron, St Petersburg, Russia
[3] Bonch Bruevich St Petersburg State Univ Telecommu, St Petersburg 193232, Russia
[4] All Russian Res Inst Phytopathol, Moscow 143050, Russia
来源：
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷
关键词：
D O I：
10.1088/1742-6596/917/6/062019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of indium phosphide structures research, showing the possibility of using in the near infrared range (NIR) photocathodes of InP / InGaAs, are represented. An optimal method of obtaining the atomically clean indium phosphide surface was suggested. The spectral characteristics of indium phosphide and InP/InGaAs heterostructure were given. Researches of the photoemission dependence of the structure with surface grid electrode upon different supply voltages were carried out.
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页数：5
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