Aligned nanowires and nanodots by directed block copolymer assembly

被引:22
作者
Xiao, Shuaigang [1 ]
Yang, XiaoMin [1 ]
Lee, Kim Y. [1 ]
ver der Veerdonk, Rene J. M. [1 ]
Kuo, David [1 ]
Russell, Thomas P. [2 ]
机构
[1] Seagate Technol, Fremont, CA 94538 USA
[2] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA
基金
美国国家科学基金会;
关键词
GRAPHOEPITAXY; LITHOGRAPHY; PATTERNS; TEMPLATES; ARRAYS;
D O I
10.1088/0957-4484/22/30/305302
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The directed self-assembly of block copolymers (BCPs) is a promising route to generate highly ordered arrays of sub-10 nm features. Ultradense arrays of a monolayer of spherical microdomains or cylindrical microdomains oriented parallel to the surface have been produced where the lateral ordering is guided by surface patterning and the lattice defined by the patterning can be commensurate or incommensurate with the natural period of the BCP. Commensurability between the two can be used to elegantly manipulate the lateral ordering and orientation of the BCP microdomains so as to form well-aligned arrays of 1D nanowires or 2D addressable nanodots. No modification of the substrate surface, aside from the patterning, was used, making the influence of lattice mismatch and pattern amplification on the size, shape and pitch of the BCP microdomains more transparent. A skew angle between incommensurate lattices, defining a stretching or compression of the BCP chains to compensate for the lattice mismatch, is presented.
引用
收藏
页数:8
相关论文
共 26 条
[1]  
[Anonymous], 2007, INT TECHN ROADM SEM
[2]   Graphoepitaxy of self-assembled block copolymers on two-dimensional periodic patterned templates [J].
Bita, Ion ;
Yang, Joel K. W. ;
Jung, Yeon Sik ;
Ross, Caroline A. ;
Thomas, Edwin L. ;
Berggren, Karl K. .
SCIENCE, 2008, 321 (5891) :939-943
[3]   High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors [J].
Black, CT ;
Guarini, KW ;
Zhang, Y ;
Kim, HJ ;
Benedict, J ;
Sikorski, E ;
Babich, IV ;
Milkove, KR .
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (09) :622-624
[4]   Assembly of aligned linear metallic patterns on silicon [J].
Chai, Jinan ;
Wang, Dong ;
Fan, Xiangning ;
Buriak, Jillian M. .
NATURE NANOTECHNOLOGY, 2007, 2 (08) :500-506
[5]   Dense self-assembly on sparse chemical patterns: Rectifying and multiplying lithographic patterns using block copolymers [J].
Cheng, Joy Y. ;
Rettner, Charles T. ;
Sanders, Daniel P. ;
Kim, Ho-Cheol ;
Hinsberg, William D. .
ADVANCED MATERIALS, 2008, 20 (16) :3155-3158
[6]   Templated self-assembly of block copolymers: Top-down helps bottom-up [J].
Cheng, Joy Y. ;
Ross, Caroline A. ;
Smith, Henry I. ;
Thomas, Edwin L. .
ADVANCED MATERIALS, 2006, 18 (19) :2505-2521
[7]   Nanostructure engineering by templated self-assembly of block copolymers [J].
Cheng, JY ;
Mayes, AM ;
Ross, CA .
NATURE MATERIALS, 2004, 3 (11) :823-828
[8]   Imprint lithography with 25-nanometer resolution [J].
Chou, SY ;
Krauss, PR ;
Renstrom, PJ .
SCIENCE, 1996, 272 (5258) :85-87
[9]   Patterning: Principles and some new developments [J].
Geissler, M ;
Xia, YN .
ADVANCED MATERIALS, 2004, 16 (15) :1249-1269
[10]   Epitaxial self-assembly of block copolymers on lithographically defined nanopatterned substrates [J].
Kim, SO ;
Solak, HH ;
Stoykovich, MP ;
Ferrier, NJ ;
de Pablo, JJ ;
Nealey, PF .
NATURE, 2003, 424 (6947) :411-414