Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography

被引：54

作者：

Huang, H. W. ^{[1
,2
]}

Lin, C. H. ^{[2
]}

Yu, C. C. ^{[2
]}

Chiu, C. H. ^{[1
]}

Lai, C. F. ^{[1
]}

Kuo, H. C. ^{[1
]}

Leung, K. M. ^{[3
]}

Lu, T. C.

Wang, S. C. ^{[1
]}

Lee, B. D. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect Opt Engn, Hsinchu 30050, Taiwan

[2] Mesophoton Ltd, Hsinchu 300, Taiwan

[3] Polytech Univ, Dept Comp & Informat Sci, Metrotech Ctr 6, Brooklyn, NY 11201 USA

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 18期

关键词：

D O I：

10.1088/0957-4484/19/18/185301

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm x 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

引用

页数：4

共 13 条

[1] Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography [J].

Byeon, Kyeong-Jae ;

Hwang, Seon-Yong ;

Lee, Heon .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[2] Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography [J].

Chang, S. J. ;

Shen, C. F. ;

Chen, W. S. ;

Kuo, C. T. ;

Ko, T. K. ;

Shei, S. C. ;

Sheu, J. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[3] Photonic crystal laser lift-off GaN light-emitting diodes [J].

David, A ;

Fujii, T ;

Moran, B ;

Nakamura, S ;

DenBaars, SP ;

Weisbuch, C ;

Benisty, H .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[4] Fabrication of two-dimensional photonic crystals using interference lithography and electrodeposition of CdSe [J].

Divliansky, IB ;

Shishido, A ;

Khoo, IC ;

Mayer, TS ;

Pena, D ;

Nishimura, S ;

Keating, CD ;

Mallouk, TE .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3392-3394

[5] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[6] Nitride-based LEDs with nano-scale textured sidewalls using natural lithography [J].

Huang, Hung-Wen ;

Kuo, H. C. ;

Chu, J. T. ;

Lai, C. F. ;

Kao, C. C. ;

Lu, T. C. ;

Wang, S. C. ;

Tsai, R. J. ;

Yu, C. C. ;

Lin, C. F. .

NANOTECHNOLOGY, 2006, 17 (12) :2998-3001

[7] Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface [J].

Huang, HW ;

Chu, JT ;

Kao, CC ;

Hseuh, TH ;

Lu, TC ;

Kuo, HC ;

Wang, SC ;

Yu, CC .

NANOTECHNOLOGY, 2005, 16 (09) :1844-1848

[8] Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface [J].

Huh, C ;

Lee, KS ;

Kang, EJ ;

Park, SJ .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9383-9385

[9] Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications [J].

Koike, M ;

Shibata, N ;

Kato, H ;

Takahashi, Y .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :271-277

[10] Anisotropy of light extraction from two-dimensional photonic crystal light-emitting diodes [J].

Lai, Chun-Feng ;

Kuo, H. C. ;

Chao, C. H. ;

Hsueh, H. T. ;

Wang, J.-F. T. ;

Yeh, W. Y. ;

Chi, J. Y. .

APPLIED PHYSICS LETTERS, 2007, 91 (12)

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