Synchrotron radiation in solid state chemistry

被引：3

作者：

Ghigna, Paolo ^{[1
]}

Pin, Sonia ^{[1
]}

Spinolo, Giorgio ^{[1
]}

Newton, Mark A. ^{[2
]}

Tarantino, Serena Chiara ^{[3
]}

Zema, Michele ^{[3
]}

机构：

[1] Univ Pavia, Dipartimento Chim Fis M Rolla, I-27100 Pavia, Italy

[2] European Synchrotron Radiat Facil, F-27100 Grenoble, France

[3] Univ Pavia, Dipartimento Sci Terra, I-27100 Pavia, Italy

来源：

RADIATION PHYSICS AND CHEMISTRY | 2011年 / 80卷 / 10期

关键词：

Solid state chemistry; Reactivity; Reaction mechanisms; XAS; INITIAL-STAGES;

D O I：

10.1016/j.radphyschem.2011.02.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An approach towards the reactivity in the solid state is proposed, primarily based on recognizing the crucial role played by the interfacial free energy and by the topotactical relationship between the two reactants, which in turn control formation of the new phase and its spatial and orientational relationships with respect to the parent phases. Using one of the reactants in the form of film, the ratio between bulk and interfacial free energy can be changed, and the effect of interfacial free energy is maximized. The role of Synchrotron Radiation in such an approach is exemplified by using a new developed technique for mu-XANIES mapping with nanometric resolution for studying the reactivity of thin films of NiO onto differently oriented Al2O3 single crystals. The result obtained allowed us to speculate about the rate determining step of the NiO+Al2O3 -> NiAl2O4 interfacial reaction. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1109 / 1111

页数：3

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