Electronic transport in magnetically ordered Mn5Si3Cx films

Mn5Si3Cx films exhibit antiferromagnetic or ferromagnetic behavior depending on the carbon doping level x. We report a detailed electronic-transport study of films prepared with different x. All films exhibit metallic behavior of the temperature-dependent resistivity rho(T)similar to-ln T with a logarithmic increase towards low temperatures attributed to the structural disorder and the accompanied scattering of conduction electrons by two-level systems. Below 1 K, the Kondo-type behavior rho(T)similar to-ln T shows a crossover to Fermi-liquid behavior rho similar to-T-2 independent of the type of magnetic order. The magnetoelectronic properties such as Hall effect and magnetoresistance show clear differences characteristic for the different magnetically ordered phases, i.e., antiferromagnetic vs ferromagnetic.