Damp-Heat-Stable, High-Efficiency, Industrial-Size Silicon Heterojunction Solar Cells

被引：78

作者：

Liu, Wenzhu ^{[1
,2
]}

Zhang, Liping ^{[1
]}

Yang, Xinbo ^{[2
]}

Shi, Jianhua ^{[1
]}

Yan, Lingling ^{[3
]}

Xu, Lujia ^{[2
]}

Wu, Zhuopeng ^{[1
]}

Chen, Renfang ^{[1
]}

Peng, Jun ^{[4
]}

Kang, Jingxuan ^{[2
]}

Wang, Kai ^{[2
]}

Meng, Fanying ^{[1
]}

De Wolf, Stefaan ^{[2
]}

Liu, Zhengxin ^{[1
]}

机构：

[1] Chinese Acad Sci, SIMIT, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China

[2] KAUST, Solar Ctr KSC, Thuwal 239556900, Saudi Arabia

[3] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China

[4] Australian Natl Univ, Res Sch Engn, Canberra, ACT 2601, Australia

来源：

JOULE | 2020年 / 4卷 / 04期

关键词：

AMORPHOUS-SILICON; MECHANISM; IMPROVEMENT; DEPOSITION; ENERGY;

D O I：

10.1016/j.joule.2020.03.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon heterojunction (SHJ) solar cells employ nanometer-thin stacks of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) films as carrier-selective contacts. To achieve excellent carrier selectivity, the a-Si:H must be carefully optimized to guarantee an atomically sharp a-Si:H/c-Si interface. In this work, by combining experiments with molecular dynamics and ab initio calculations, we unveil that H atoms bonded to internal-void surfaces in a-Si:H broaden its optical band gap via a filamentary effect near the valence-band maximum. The photovoltaic performance of rear-emitter SHJ solar cells can be significantly improved by tailoring the Si-H bonding state in the front a-Si:H passivation layer, resulting in a power conversion efficiency (PCE) of 23.4% on a 6-in cell. By implementing double antireflection coatings (ARCs) of SiNx and SiOx, the PCE is further improved to 23.9%. More importantly, the ARC devices show prominently improved damp-heat stability without encapsulation in 1,000-h aging at 85 degrees C, 85% relative humidity.

引用

页码：913 / 927

页数：15

共 59 条

[1] Effects of SiOx barrier layer prepared by plasma-enhanced chemical vapor deposition on improvement of long-term reliability and production cost for Cu-plated amorphous Si/crystalline Si heterojunction solar cells [J].

Adachi, Daisuke ;

Terashita, Toni ;

Uto, Toshihiko ;

Hernandez, Jose Luis ;

Yamamoto, Kenji .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2017, 163 :204-209

[2]

[Anonymous], 36 EUR PHOT SOL EN C

[3] Efficient silicon solar cells with dopant-free asymmetric heterocontacts [J].

Bullock, James ;

Hettick, Mark ;

Geissbuhler, Jonas ;

Ong, Alison J. ;

Allen, Thomas ;

Sutter-Fella, Carolin M. ;

Chen, Teresa ;

Ota, Hiroki ;

Schaler, Ethan W. ;

De Wolf, Stefaan ;

Ballif, Christophe ;

Cuevas, Andres ;

Javey, Ali .

NATURE ENERGY, 2016, 1

[4] 23.6%-efficient monolithic perovskite/silicon tandem solar cells with improved stability [J].

Bush, Kevin A. ;

Palmstrom, Axel F. ;

Yu, Zhengshan J. ;

Boccard, Mathieu ;

Cheacharoen, Rongrong ;

Mailoa, Jonathan P. ;

McMeekin, David P. ;

Hoye, Robert L. Z. ;

Bailie, Colin D. ;

Leijtens, Tomas ;

Peters, Ian Marius ;

Minichetti, Maxmillian C. ;

Rolston, Nicholas ;

Prasanna, Rohit ;

Sofia, Sarah ;

Harwood, Duncan ;

Ma, Wen ;

Moghadam, Farhad ;

Snaith, Henry J. ;

Buonassisi, Tonio ;

Holman, Zachary C. ;

Bent, Stacey F. ;

McGehee, Michael D. .

NATURE ENERGY, 2017, 2 (04)

[5] Effect of front TCO on the performance of rear-junction silicon heterojunction solar cells: Insights from simulations and experiments [J].

Cruz, Alexandros ;

Wang, Er-Chien ;

Morales-Vilches, Anna B. ;

Meza, Daniel ;

Neubert, Sebastian ;

Szyszka, Bernd ;

Schlatmann, Rutger ;

Stannowski, Bernd .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2019, 195 :339-345

[6] Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction [J].

De Wolf, Stefaan ;

Ballif, Christophe ;

Kondo, Michio .

PHYSICAL REVIEW B, 2012, 85 (11)

[7] Accurate defect levels obtained from the HSE06 range-separated hybrid functional [J].

Deak, Peter ;

Aradi, Balint ;

Frauenheim, Thomas ;

Janzen, Erik ;

Gali, Adam .

PHYSICAL REVIEW B, 2010, 81 (15)

[8] Is light-induced degradation of a-Si:H/c-Si interfaces reversible? [J].

El Mhamdi, El Mahdi ;

Holovsky, Jakub ;

Demaurex, Benedicte ;

Ballif, Christophe ;

De Wolf, Stefaan .

APPLIED PHYSICS LETTERS, 2014, 104 (25)

[9] Metastable Defect Formation at Microvoids Identified as a Source of Light-Induced Degradation in a-Si:H [J].

Fehr, M. ;

Schnegg, A. ;

Rech, B. ;

Astakhov, O. ;

Finger, F. ;

Bittl, R. ;

Teutloff, C. ;

Lips, K. .

PHYSICAL REVIEW LETTERS, 2014, 112 (06)

[10] Impact of epitaxial growth at the heterointerface of a-Si:H/c-Si solar cells [J].

Fujiwara, Hiroyuki ;

Kondo, Michio .

APPLIED PHYSICS LETTERS, 2007, 90 (01)

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