Physical and chemical characterization of barium strontium titanate thin films

被引：0

作者：

Remmel, T ^{[1
]}

Chen, T ^{[1
]}

Liu, R ^{[1
]}

Kottke, M ^{[1
]}

Gregory, R ^{[1
]}

Fejes, P ^{[1
]}

Baumert, B ^{[1
]}

Chu, P ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Semicond Technol, Mesa, AZ 85202 USA

来源：

CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 1998年 / 449卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of barium strontium titanate (BST) are under consideration as a replacement for silicon dioxide as the dielectric in advanced memory devices. The major attraction of BST is its very high dielectric constant compared to SiO2. Integral to the development and implementation of a new materials system such as BST is physical and chemical characterization. To achieve optimal electrical performance with a robust process requires an in-depth understanding of the relationships between materials/process variables, physical/chemical properties and the electrical behavior of the BST films. This paper covers specifics of many of these inter-relationships.

引用

页码：283 / 287

页数：5