Shallow-donor states in semiconductor heterostructures within the fractional-dimensional space approach

被引：22
作者：
Oliveira, LE
Duque, CA
Porras-Montenegro, N
de Dios-Leyva, M
机构：
[1] Univ Estadual Campinas, Inst Fis, UNICAMP, BR-13083970 Campinas, SP, Brazil
[2] Univ Antioquia, Dept Fis, Medellin, Colombia
[3] Univ Valle, Dept Fis, Cali, Colombia
[4] Univ Havana, Dept Theoret Phys, Havana 10400, Cuba
来源：
PHYSICA B | 2001年 / 302卷
关键词：
shallow donors; quantum wells; quantum wires; quantum dots;
D O I：
10.1016/S0921-4526(01)00408-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Shallow-donor states in quantum-sized semiconductor heterostructures are studied within the fractional-dimensional space approach. Calculations were performed for the binding energies of the ground state of donors in GaAs-(Ga,Al)As quantum wells, cylindrical quantum-well wires, and spherical quantum dots. Functional-dimensional theoretical results are shown to be in good agreement with previous variational calculations. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：72 / 76
页数：5
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