Intrinsic carrier concentration in strained Si1-xGex/(101)Si

The intrinsic carrier concentration is the important parameter for researching strained Si(1-x)G(x) materials properties and evaluating Si-based strained devices parameters. In this paper, at the beginning of analyzing the band structure of strained Si(1-x)G(x)/(101)Si, the dependence of its effective densities of states for the conduction and valence bands (N-c, N-v) and its intrinsic carrier concentration (n(i)) on Ge fraction (x) and temperature were obtained. The results show that n(i) increases significantly due to the effect of strain in strained Si(1-x)G(x)/(101)Si. Furthermore, N-c and N-v decrease with increasing Ge fraction (x). In addition, it is also found that as the temperature becomes higher, the increase in N-c and N-v, occurs. The results can provide valuable references to the understanding on the Si-based strained device physics and its design.