GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer

被引：13

作者：

Lee, Kai Hsuan ^{[1
]}

Chang, Ping Chuan ^{[2
]}

Chang, Shoou Jinn ^{[3
]}

Wu, San Lein ^{[4
]}

机构：

[1] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[2] Kun Shan Univ, Dept Electroopt Engn, Tainan 71003, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 83347, Taiwan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 03期

关键词：

GaN; intermediate layers; ultraviolet photodetectors; DETECTORS; GROWTH; DIODES; LUMINESCENCE; CARBON; GAIN;

D O I：

10.1002/pssa.201127545

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN-GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5-pair AlGaN-GaN intermediate layer. For our device biased at -5V, the responsivity at 360 nm was found to be 0.26 A/W and the UV-to-visible rejection ratio was estimated to be 1.83 x 10(4). At the same bias, it was found that minimum noise equivalent power and normalized detectivity of our device were 1.00 x 10(-9) W and 1.45 x 10(9) cm Hz 0.5 W-1, respectively. This indicates a simple and effective way to fabricate high-performance PDs for UV detection. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：579 / 584

页数：6

共 19 条

[1] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].

BARKER, AS ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1973, 7 (02) :743-750

[2] Semiconductor near-ultraviolet photoelectronics [J].

Goldberg, YA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (07) :R41-R60

[3] X-ray diffraction analysis of the defect structure in epitaxial GaN [J].

Heinke, H ;

Kirchner, V ;

Einfeldt, S ;

Hommel, D .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2145-2147

[4] 1/F NOISE SOURCES [J].

HOOGE, FN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1926-1935

[5] Density functional theory predictions for blue luminescence and nonlinear optical properties of carbon-doped gallium nitride [J].

Hu, XiaoLin ;

Zhang, YongFan ;

Zhuang, NaiFeng ;

Li, JunQian .

JOURNAL OF SOLID STATE CHEMISTRY, 2010, 183 (12) :2741-2745

[6] Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry [J].

Katz, O ;

Garber, V ;

Meyler, B ;

Bahir, G ;

Salzman, J .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :347-349

[7] Gain mechanism in GaN Schottky ultraviolet detectors [J].

Katz, O ;

Garber, V ;

Meyler, B ;

Bahir, G ;

Salzman, J .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1417-1419

[8] Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy [J].

Liu, X. Y. ;

Janes, P. ;

Holmstrom, P. ;

Aggerstam, T. ;

Lourdudoss, S. ;

Thylen, L. ;

Andersson, T. G. .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) :79-82

[9] Interface states mediated reverse leakage through metal/AlxGa1-xN/GaN Schottky diodes [J].

Lu, Changzhi ;

Zhang, Xiaoling ;

Xie, Xuesong ;

Feng, Shiwei ;

Diagne, Ibrahima ;

Khan, Arif ;

Mohammad, S. Noor .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06) :1987-1992

[10] III nitrides and UV detection [J].

Muñoz, E ;

Monroy, E ;

Pau, JL ;

Calle, F ;

Omnès, F ;

Gibart, P .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (32) :7115-7137

← 1 2 →