Characterisation and electrical property of molten-grown CuTCNQ film material

被引：28

作者：

Liu, SG

Liu, YQ

Wu, PJ

Zhu, DB

Tian, H

Chen, KC

机构：

[1] CHINESE ACAD SCI, INST CHEM, BEIJING 100080, PEOPLES R CHINA

[2] E CHINA UNIV SCI & TECHNOL, INST FINE CHEM, SHANGHAI 200237, PEOPLES R CHINA

来源：

THIN SOLID FILMS | 1996年 / 289卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

thin film materials; electronic devices;

D O I：

10.1016/S0040-6090(96)08879-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metallic copper foil directly reacted with molten TCNQ (7,7,8,8-tetracyano-p-quinodimethane) under nitrogen atmosphere resulted in a CuTCNQ semiconducting film with electrical switching and memory properties. The material was characterised by Raman and UV-Vis spectral analyses as well as current-voltage characteristic measurement. The degree of charge transfer from copper to TCNQ and the electrical memory switching property are discussed. The spectral analyses, degree of charge transfer and electrical property are compared with those of both metathetically synthesised pure CuTCNQ powder and a solution-grown film material.

引用

页码：300 / 305

页数：6

共 39 条

[1] SPECTRAL DEPENDENCE OF REVERSIBLE OPTICALLY INDUCED TRANSITIONS IN ORGANOMETALLIC COMPOUNDS [J].