Characterization of epitaxial BiFeO3 thin films prepared by ion beam sputtering

被引：6

作者：

Nakashima, Seiji ^{[1
]}

Tsujita, Yosuke ^{[1
]}

Fujisawa, Hironori ^{[1
]}

Park, Jung Min ^{[2
]}

Kanashima, Takeshi ^{[2
]}

Okuyama, Masanori ^{[3
]}

Shimizu, Masaru ^{[1
]}

机构：

[1] Univ Hyogo, Dept Elect Engn & Comp Sci, Grad Sch Engn, Himeji, Hyogo 6712201, Japan

[2] Osaka Univ, Dept Syst Innovat, Grad Sch Engn Sci, Osaka 5608531, Japan

[3] Osaka Univ, Inst NanoSci Design, Osaka 5608531, Japan

来源：

CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 03期

关键词：

BFO; Thin film; Ion beam sputtering; MAGNETOELECTRIC PROPERTIES; MEMBRANE-STRUCTURE; POLARIZATION;

D O I：

10.1016/j.cap.2010.11.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on deposition of epitaxial BiFeO3 (BFO) thin films on SrRuO3-buffered SrTiO3 (001) substrate by using ion beam sputtering process. An X-ray diffraction analysis indicate that the BFO thin film deposited at 500 degrees C using a target with Bi/Fe ratio of 1.05 is perovskite single phase and is epitaxially grown on the substrate. The BFO thin film show saturated D-E hysteresis loops and the double remanent polarization (2P(r)) of 100 mu C/cm(2) without measurement frequency dependence. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S244 / S246

页数：3

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