Characterization of epitaxial BiFeO3 thin films prepared by ion beam sputtering

被引：6
|
作者：
Nakashima, Seiji [1 ]
Tsujita, Yosuke [1 ]
Fujisawa, Hironori [1 ]
Park, Jung Min [2 ]
Kanashima, Takeshi [2 ]
Okuyama, Masanori [3 ]
Shimizu, Masaru [1 ]
机构：
[1] Univ Hyogo, Dept Elect Engn & Comp Sci, Grad Sch Engn, Himeji, Hyogo 6712201, Japan
[2] Osaka Univ, Dept Syst Innovat, Grad Sch Engn Sci, Osaka 5608531, Japan
[3] Osaka Univ, Inst NanoSci Design, Osaka 5608531, Japan
来源：
CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 03期
关键词：
BFO; Thin film; Ion beam sputtering; MAGNETOELECTRIC PROPERTIES; MEMBRANE-STRUCTURE; POLARIZATION;
D O I：
10.1016/j.cap.2010.11.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on deposition of epitaxial BiFeO3 (BFO) thin films on SrRuO3-buffered SrTiO3 (001) substrate by using ion beam sputtering process. An X-ray diffraction analysis indicate that the BFO thin film deposited at 500 degrees C using a target with Bi/Fe ratio of 1.05 is perovskite single phase and is epitaxially grown on the substrate. The BFO thin film show saturated D-E hysteresis loops and the double remanent polarization (2P(r)) of 100 mu C/cm(2) without measurement frequency dependence. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：S244 / S246
页数：3
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