Strain-Induced Tunable Magnetic Interaction in (Mo,Co)S2/(Si,Co)C Heterostructure

被引:3
|
作者
Luo, M. [1 ]
Xu, Y. E. [2 ]
Song, Y. X. [3 ]
机构
[1] Shanghai Second Polytech Univ, Dept Phys, Shanghai 201209, Peoples R China
[2] Shang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China
[3] East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
关键词
MoS2/SiC heterostructures; Tunable magnetic interaction; Normal strain; First-principles calculations; BLACK PHOSPHORUS; ELECTRIC-FIELD; BORON-NITRIDE; BAND-GAP; TRANSITION; GRAPHENE;
D O I
10.1007/s10948-017-4246-7
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the first-principles method, we reported tunable magnetic interaction in Co-doped MoS2/SiC van der Waals (vdW) heterostructures under normal strain. The interlayer interaction between (Mo,Co)S-2 and (Si,Co)C monolayers is antiferromagnetic (AFM) at the equilibrium state. Our results reveal that the compressive strain has much influence on the interlayer interaction of the vdW heterostructures and the interlayer interaction switched from AFM to ferromagnetic (FM). By contrast, under a tensile strain, the interlayer interaction between (Mo,Co)S-2 and (Si,Co)C monolayers is always AFM. The results show that the interaction between (Mo,Co)S-2 and (Si,Co)C monolayers changes from AFM to FM, which could be explained by the superexchange and the p - d exchange, respectively. Moreover, according to the magnetic anisotropy energy (MAE), the easy axis of the magnetization is parallel to the a-axis in current vdW heterostructures.
引用
收藏
页码:597 / 601
页数:5
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