Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

被引：42

作者：

Inaba, Masafumi ^{[1
]}

Muta, Tsubasa ^{[1
]}

Kobayashi, Mikinori ^{[1
]}

Saito, Toshiki ^{[1
]}

Shibata, Masanobu ^{[1
]}

Matsumura, Daisuke ^{[1
]}

Kudo, Takuya ^{[1
]}

Hiraiwa, Atsushi ^{[1
]}

Kawarada, Hiroshi ^{[1
,2
]}

机构：

[1] Waseda Univ, Grad Sch Sci & Engn, Shinjuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan

[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, 2-8-26 Nishiwaseda, Tokyo 1690051, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 03期

关键词：

PERFORMANCE; FABRICATION; OPERATION; MOSFETS;

D O I：

10.1063/1.4958889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off. Published by AIP Publishing.

引用

页数：4

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