共 48 条
Changes in the Photoluminescence of Monolayer and Bilayer Molybdenum Disulfide during Laser Irradiation
被引:14
作者:

Kim, Ho-Jong
论文数: 0 引用数: 0
h-index: 0
机构:
Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea
Yonsei Univ, Dept Phys, Seoul 03722, South Korea Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea

Yun, Yong Ju
论文数: 0 引用数: 0
h-index: 0
机构:
Konkuk Univ, Dept Energy Engn, Seoul 05029, South Korea Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea

Yi, Sam Nyung
论文数: 0 引用数: 0
h-index: 0
机构:
Korea Maritime & Ocean Univ, Dept Elect Mat Engn, Busan 49112, South Korea Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea

Chang, Soo Kyung
论文数: 0 引用数: 0
h-index: 0
机构:
Yonsei Univ, Dept Phys, Seoul 03722, South Korea Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea

Ha, Dong Han
论文数: 0 引用数: 0
h-index: 0
机构:
Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea
机构:
[1] Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 03722, South Korea
[3] Konkuk Univ, Dept Energy Engn, Seoul 05029, South Korea
[4] Korea Maritime & Ocean Univ, Dept Elect Mat Engn, Busan 49112, South Korea
来源:
ACS OMEGA
|
2020年
/
5卷
/
14期
关键词:
RAMAN-SPECTROSCOPY;
MOS2;
TRANSITION;
GENERATION;
THICKNESS;
TRIONS;
D O I:
10.1021/acsomega.9b04202
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Various postsynthesis processes for transition metal dichalcogenides have been attempted to control the layer number and defect concentration, on which electrical and optical properties strongly depend. In this work, we monitored changes in the photoluminescence (PL) of molybdenum disulfide (MoS2) until laser irradiation generated defects on the sample flake and completely etched it away. Higher laser power was required to etch bilayer MoS2 compared to monolayer MoS2. When the laser power was 270 mu W with a full width at half-maximum of 1.8 mu m on bilayer MoS2, the change in PL intensity over time showed a double maximum during laser irradiation due to a layer-by-layer etching of the flake. When the laser power was increased to 405 mu W, however, both layers of bilayer MoS2 were etched all at once, which resulted in a single maximum in the change of PL intensity over time, as in the case of monolayer MoS2 . The dependence of the etching pattern for bilayer MoS2 on laser power was also reflected in position changes of both exciton and trion PL peaks. The subtle changes in the PL spectra of MoS2 as a result of laser irradiation found here are discussed in terms of PL quantum efficiency, conversion between trions and excitons, mean interatomic spacing, and the screening of Coulomb interaction.
引用
收藏
页码:7903 / 7909
页数:7
相关论文
共 48 条
- [1] Evaluation of an integrated Fourier-transform spectrometer utilizing a lateral effect position sensitive detector with a multi-channel Fabry-Perot interferometer[J]. MEASUREMENT SCIENCE AND TECHNOLOGY, 2008, 19 (04)Andersson, H. A.论文数: 0 引用数: 0 h-index: 0机构: Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, SwedenManuilskiy, A.论文数: 0 引用数: 0 h-index: 0机构: Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, SwedenThungstrom, G.论文数: 0 引用数: 0 h-index: 0机构: Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, SwedenNilsson, H-E论文数: 0 引用数: 0 h-index: 0机构: Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden
- [2] Reversible Photoluminescence Tuning by Defect Passivation via Laser Irradiation on Aged Monolayer MoS2[J]. ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (41) : 38240 - 38246论文数: 引用数: h-index:机构:Younts, Robert论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA North Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAYu, Yiling论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USACao, Linyou论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAGundogdu, Kenan论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
- [3] Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates[J]. JOURNAL OF APPLIED PHYSICS, 2017, 122 (01)Barvat, Arun论文数: 0 引用数: 0 h-index: 0机构: CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India AcSIR, CSIR Natl Phys Lab Campus,Dr KS Krishnan Rd, New Delhi 110012, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaPrakash, Nisha论文数: 0 引用数: 0 h-index: 0机构: CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India AcSIR, CSIR Natl Phys Lab Campus,Dr KS Krishnan Rd, New Delhi 110012, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaSatpati, Biswarup论文数: 0 引用数: 0 h-index: 0机构: Saha Inst Nucl Phys, Surface Phys & Mat Sci Div, 1-AF Bidhannagar, Kolkata 700064, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaSingha, Shib Shankar论文数: 0 引用数: 0 h-index: 0机构: Bose Inst, Dept Phys, 93-1 Acharya Prafulla Chandra Rd, Kolkata 700009, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaKumar, Gaurav论文数: 0 引用数: 0 h-index: 0机构: CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaSingh, Dilip K.论文数: 0 引用数: 0 h-index: 0机构: CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaDogra, Anjana论文数: 0 引用数: 0 h-index: 0机构: CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India AcSIR, CSIR Natl Phys Lab Campus,Dr KS Krishnan Rd, New Delhi 110012, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaKhanna, Suraj P.论文数: 0 引用数: 0 h-index: 0机构: CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaSingha, Achintya论文数: 0 引用数: 0 h-index: 0机构: Bose Inst, Dept Phys, 93-1 Acharya Prafulla Chandra Rd, Kolkata 700009, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, IndiaPal, Prabir论文数: 0 引用数: 0 h-index: 0机构: CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India AcSIR, CSIR Natl Phys Lab Campus,Dr KS Krishnan Rd, New Delhi 110012, India CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India
- [4] Enhanced Raman and photoluminescence response in monolayer MoS2 due to laser healing of defects[J]. JOURNAL OF RAMAN SPECTROSCOPY, 2018, 49 (01) : 100 - 105论文数: 引用数: h-index:机构:Muthu, D. V. S.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, IndiaSood, A. K.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
- [5] Theory of neutral and charged excitons in monolayer transition metal dichalcogenides[J]. PHYSICAL REVIEW B, 2013, 88 (04)Berkelbach, Timothy C.论文数: 0 引用数: 0 h-index: 0机构: Columbia Univ, Dept Chem, New York, NY 10027 USA Columbia Univ, Dept Chem, New York, NY 10027 USAHybertsen, Mark S.论文数: 0 引用数: 0 h-index: 0机构: Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA Columbia Univ, Dept Chem, New York, NY 10027 USAReichman, David R.论文数: 0 引用数: 0 h-index: 0机构: Columbia Univ, Dept Chem, New York, NY 10027 USA Columbia Univ, Dept Chem, New York, NY 10027 USA
- [6] LATTICE-PARAMETERS OF SPUTTERED MOS2 FILMS[J]. THIN SOLID FILMS, 1991, 198 (1-2) : 157 - 167BUCK, V论文数: 0 引用数: 0 h-index: 0机构: Physics Department (FB7), Universität GH Essen, Universitätsstraße 5, D-4300 Essen F.R.G. In cooperation with the Department of Lubricants and Tribology of DLR (Deutsche Forschungsund Versuchsanstalt für Luft- und Raumfahrt e.V.,)
- [7] Photocurrent generation with two-dimensional van der Waals semiconductors[J]. CHEMICAL SOCIETY REVIEWS, 2015, 44 (11) : 3691 - 3718Buscema, Michele论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsIsland, Joshua O.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsGroenendijk, Dirk J.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsBlanter, Sofya I.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsSteele, Gary A.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlandsvan der Zant, Herre S. J.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands论文数: 引用数: h-index:机构:
- [8] Laser-Thinning of MoS2: On Demand Generation of a Single-Layer Semiconductor[J]. NANO LETTERS, 2012, 12 (06) : 3187 - 3192论文数: 引用数: h-index:机构:Barkelid, M.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsGoossens, A. M.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsCalado, V. E.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlandsvan der Zant, H. S. J.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, NetherlandsSteele, G. A.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
- [9] Defect-Induced Photoluminescence in Mono layer Semiconducting Transition Metal Dichalcogenides[J]. ACS NANO, 2015, 9 (02) : 1520 - 1527Chow, Philippe K.论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Troy, NY 12180 USA Rensselaer Polytech Inst, Troy, NY 12180 USAJacobs-Gedrim, Robin B.论文数: 0 引用数: 0 h-index: 0机构: SUNY Coll Nanoscale Sci & Engn, Albany, NY 12203 USA Rensselaer Polytech Inst, Troy, NY 12180 USAGao, Jian论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Troy, NY 12180 USA Rensselaer Polytech Inst, Troy, NY 12180 USALu, Toh-Ming论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Troy, NY 12180 USA Rensselaer Polytech Inst, Troy, NY 12180 USAYu, Bin论文数: 0 引用数: 0 h-index: 0机构: SUNY Coll Nanoscale Sci & Engn, Albany, NY 12203 USA Rensselaer Polytech Inst, Troy, NY 12180 USATerrones, Humberto论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Troy, NY 12180 USA Rensselaer Polytech Inst, Troy, NY 12180 USAKoratkar, Nikhil论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Troy, NY 12180 USA Rensselaer Polytech Inst, Troy, NY 12180 USA
- [10] Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2[J]. NANOSCALE, 2014, 6 (21) : 13028 - 13035Dhakal, Krishna P.论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South KoreaDinh Loc Duong论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South KoreaLee, Jubok论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South KoreaNam, Honggi论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South KoreaKim, Minsu论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South KoreaKan, Min论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea Peking Univ, Dept Mat Sci & Engn, Beijing 100871, Peoples R China Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South KoreaLee, Young Hee论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea Sungkyunkwan Univ, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea论文数: 引用数: h-index:机构: