Fabrication of high-performance Ge-MOS structure using Al2O3/TiO2 stacked gate insulating film

被引：0

作者：

Toyoda, Kenichiro ^{[1
]}

Ito, Keisuke ^{[1
]}

Iwazaki, Yoshitaka ^{[1
]}

Ueno, Tomo ^{[1
]}

机构：

[1] Tokyo Univ Agri & Tech, Grad Sch Elect & Elect Engn, 2-24-16,Nakacho, Koganei Shi, Tokyo 1848588, Japan

来源：

PROCEEDINGS OF AM-FPD 21: THE TWENTY-EIGHTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES - TFT TECHNOLOGIES AND FPD MATERIALS | 2021年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In recent years, combination of high-mu materials and high-k insulating films has attracted attention as a technique for future switching devices. Using a a substrate as a high-mu. material, it is expected that the operation speed of the device will be increased. On the other hand, it is necessary to introduce a high-k material. However, it is difficult to obtain good interface characteristics by direct deposition of HfO2 or Al2O3 on Ge substrates. In this study, we tried to introduce another high dielectric constant material TiO2. Additionally, we have considered a stacked structure with Al2O3, which has a large band gap (8.8 [eV]). In this study, high performance Ge-MOS was realized with Al2O3/TiO2/Ge structure.

引用

页码：112 / 115

页数：4