Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

被引：90

作者：

Bader, Samuel James ^{[1
]}

Chaudhuri, Reet ^{[2
]}

Nomoto, Kazuki ^{[2
]}

Hickman, Austin ^{[2
]}

Chen, Zhen ^{[1
]}

Then, Han Wui ^{[3
]}

Muller, David A. ^{[4
]}

Xing, Huili Grace ^{[5
]}

Jena, Debdeep ^{[5
]}

机构：

[1] Cornell Univ, Dept Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Intel Corp, Hillsboro, OR 97124 USA

[4] Cornell Univ, Kavli Inst, Dept Appl & Engn Phys, Ithaca, NY 14853 USA

[5] Cornell Univ, Kavli Inst, Dept Elect & Comp Engn, Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 12期

关键词：

Wide-bandgap; p-channel; GaN; power; MOSFETS;

D O I：

10.1109/LED.2018.2874190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices.

引用

页码：1848 / 1851

页数：4

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