50-830 MHz noise and distortion canceling CMOS low noise amplifier

被引:7
作者
Arshad, Sana [1 ]
Ramzan, Rashad [2 ]
Wahab, Qamar-ul [3 ]
机构
[1] NED Univ Engn & Technol, Dept Elect Engn, Elect Design Ctr, POB 75270, Karachi, Pakistan
[2] United Arab Emirates Univ, Elect Engn Dept, POB 15551, Al Ain, U Arab Emirates
[3] Linkoping Univ, IFM Dept, Linkoping, Sweden
关键词
CMOS; Distortion; Feedback; FOM; Linearity; LNA; Noise; Wideband; ULTRA-WIDE-BAND; LOW-POWER; DIFFERENTIAL LNA; FEEDBACK; DESIGN; INDUCTORLESS; GAIN;
D O I
10.1016/j.vlsi.2017.07.006
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced by the main stage. The proposed topology has a bandwidth similar to a resistive shunt feedback LNA, but with a superior noise figure (NF) and linearity. The proposed wideband LNA is fabricated in 130 nm CMOS technology and occupies an area of 0.5 mm(2). Measured results depict 3-dB bandwidth from 50 to 830 MHz. The measured gain and NF at 420 MHz are 17 dB and 2.2 dB, respectively. The high value of the 1/f noise is one of the key problems in low frequency CMOS designs. The proposed topology also addresses this challenge and a low NF is attained at low frequencies. Measured 811 and S22 are better than -8.9 dB and -8.5 dB, respectively within the 0.05-1 GHz band. The 1-dB compression point is -11.5 dBm at 700 MHz, while the IIP3 is -6.3 dBm. The forward core consumes 14 mW from a 1.8 V supply. This LNA is suitable for VHF and UHF SDR communication receivers.
引用
收藏
页码:63 / 73
页数:11
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