Surface acoustic wave based ozone sensor with a InOx/Si3N4/36° YX LiTaO3 structure

被引:3
作者
Fechete, AC [1 ]
Ippolito, SJ [1 ]
Kalantar-zadeh, K [1 ]
Wlodarski, W [1 ]
Holland, AS [1 ]
机构
[1] RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia
来源
MICRO- AND NANOTECHNOLOGY: MATERIALS, PROCESSES, PACKAGING, AND SYSTEMS II | 2005年 / 5650卷
关键词
SAW sensor; indium oxide; silicon nitride; and ozone;
D O I
10.1117/12.582076
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A layered Surface Acoustic Wave (SAW) device based on an InOx/Si3N4/36 degrees YX LiTaO3 structure is investigated for sensing ozone in air at different operating temperatures and concentrations. These concentrations are between 25 ppb and 150 ppb. Layered SAW devices are of a great interest as they show a remarkable performance for liquid and gas sensing applications. This structure is a single delay line SAW device with 64 input and output finger pairs, having periodicity of 24 mu m. They were fabricated on a 36 degrees Y-cut X-propagating lithium tantalate (LiTaO3) piezoelectric substrate. A 1 mu m thick silicon nitride (Si3N4) layer was deposited over the finger pairs and a 100 nm indium oxide (InOx) sensing layer was deposited over the Si3N4 layer. Both layers were deposited by RF magnetron sputtering. InOx was chosen as it has a remarkable sensitivity towards ozone. Si3N4 was chosen as it is inert and has stable characteristics at high temperature. The sensor performance is analysed in terms of response time, recovery time and response magnitude as a function of operational temperature. The operational temperature ranges between 185 degrees C and 205 degrees C. The sensor shows repeatability, reversibility, fast response and recovery time. At approximately 190 degrees C the highest sensitivity was observed. A frequency shift of 5.0 kHz at 25 ppb, 6.5 kHz at 50 ppb ozone was recorded. The presented results show this structure is promising for gas sensing applications.
引用
收藏
页码:268 / 275
页数:8
相关论文
共 24 条
  • [1] AGUIR K, 2003, P EUROSENSORS 17 17, P918
  • [2] Investigation on ozone-sensitive In2O3 thin films
    Atashbar, MZ
    Gong, B
    Sun, HT
    Wlodarski, W
    Lamb, R
    [J]. THIN SOLID FILMS, 1999, 354 (1-2) : 222 - 226
  • [3] Ballantine D.S., 1997, ACOUSTIC WAVE SENSOR
  • [4] CAMPBELL CK, 1998, BASICS PIEZOELECTRIC, P40
  • [5] Preparation of indium oxide thin film by spin-coating method and its gas-sensing properties
    Chung, WY
    Sakai, G
    Shimanoe, K
    Miura, N
    Lee, DD
    Yamazoe, N
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1998, 46 (02) : 139 - 145
  • [6] CUNHA MP, 2000, INT J HIGH SPEED ELE, V10, P1069
  • [7] Acoustic wave technology sensors
    Drafts, B
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (04) : 795 - 802
  • [8] Electrical and structural properties of RGTO-In2O3 sensors for ozone detection
    Faglia, G
    Allieri, B
    Comini, E
    Depero, LE
    Sangaletti, L
    Sberveglieri, G
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1999, 57 (1-3) : 188 - 191
  • [9] REVERSIBLE CHANGES OF THE OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS INOX BY PHOTOREDUCTION AND OXIDATION
    FRITZSCHE, H
    PASHMAKOV, B
    CLAFLIN, B
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 32 (04) : 383 - 393
  • [10] The influence of deposition parameters on room temperature ozone sensing properties of InOx films
    Gagaoudakis, E
    Bender, M
    Douloufakis, E
    Katsarakis, N
    Natsakou, E
    Cimalla, V
    Kiriakidis, G
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2001, 80 (02) : 155 - 161