The characterization of fluorine doped tin oxide films by Fourier Transformation Infrared spectrum

被引：17

作者：

Zhang, B. ^{[1
,2
]}

Tian, Y. ^{[1
]}

Zhang, J. X. ^{[1
,2
]}

Cai, W. ^{[2
]}

机构：

[1] Shandong Univ, Sch Mat Sci & Engn, Jinan 250061, Shandong, Peoples R China

[2] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 24期

关键词：

Thin films; Defects; Spray pyrolysis; Plasma frequency; THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES;

D O I：

10.1016/j.matlet.2010.08.065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnO2 films, both undoped and doped with fluorine were prepared by spray pyrolysis technique. The FTIR spectrum was employed to investigate the oxygen vacancy and substitution of fluorine in SnO2 lattice. The feature of SnE2 confirms the substitution of fluorine for oxygen. The result of substitution can be expressed as a defect model of SnOxF2 - 4x which serves as the donor of free electrons. The cutoff wavelength of reflectivity is calculated and confirms the rationality of SnOxF4 - x model for fluorine doped SnO2 film. The calculation indicates that the carrier concentration is a decisive role for the reflectivity of fluorine doped SnO2 film. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2707 / 2709

页数：3

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