Trapping effects and microwave power performance in AlGaN/GaN HEMTs

被引：542

作者：

Binari, SC ^{[1
]}

Ikossi, K ^{[1
]}

Roussos, JA ^{[1
]}

Kruppa, W ^{[1
]}

Park, D ^{[1
]}

Dietrich, HB ^{[1
]}

Koleske, DD ^{[1
]}

Wickenden, AE ^{[1
]}

Henry, RL ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 03期

关键词：

GaN; MERIT; heterojunction; microwave transistor; MODFET; trapping;

D O I：

10.1109/16.906437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dc, small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80V have been attained. For a 0.4 mum gate length, an f(T) of 30 GHz and an f(max) of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed, It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz.

引用

页码：465 / 471

页数：7

共 21 条

[11] Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors [J].