Thermoelectric properties of co-doped (Bi0.98In0.02)2Te2.7Se0.3/reduced graphene oxide composites prepared by solid-state reaction

被引：13
作者：
Hegde, Ganesh Shridhar [1 ]
Parol, Vinay [1 ]
Rao, Ashok [1 ]
Prabhu, A. N. [1 ]
Levinsky, Joshua J. B. [2 ]
Blake, Graeme R. [2 ]
机构：
[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, India
[2] Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands
来源：
MATERIALS RESEARCH BULLETIN | 2022年 / 145卷
关键词：
Composites; Chalchogenides; Semiconductivity; X-ray diffraction; Thermoelectrics; BISMUTH-ANTIMONY-TELLURIDE; THERMAL-CONDUCTIVITY; PERFORMANCE; ENHANCEMENT; BI2TE3; FIGURE; MERIT;
D O I：
10.1016/j.materresbull.2021.111517
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermoelectric properties of co-doped (Bi0.98In0.02)(2)Te2.7Se0.3/reduced graphene oxide composites between 10 - 325 K are presented. X-ray diffraction confirms that the composites adopt a rhombohedral structure with space group R (3) over barm. Field emission scanning electron microscopy reveals an interface structure of reduced graphene oxide (rGO). N-type conducting behaviour is observed for all the samples, as ascertained by Hall effect and Seebeck coefficient measurements, with a carrier concentration of 10(25)/m(3). The thermal conductivity and electrical resistivity of (Bi0.98In0.02)(2)Te2.7Se0.3/0.02 wt% reduced graphene oxide composite is found to decrease by 1.6 and 10 times respectively in comparison with that of (Bi0.98In0.02)(2)Te2.7Se0.3. The power factor is enhanced by 7 times for (Bi0.98In0.02)(2)Te2.7Se0.3/0.01 wt% rGO compared to that of (Bi0.98In0.02)(2)Te2.7Se0.3.
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页数：13
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