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Thermoelectric properties of co-doped (Bi0.98In0.02)2Te2.7Se0.3/reduced graphene oxide composites prepared by solid-state reaction
被引:13
|作者:
Hegde, Ganesh Shridhar
[1
]
Parol, Vinay
[1
]
Rao, Ashok
[1
]
Prabhu, A. N.
[1
]
Levinsky, Joshua J. B.
[2
]
Blake, Graeme R.
[2
]
机构:
[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, India
[2] Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands
关键词:
Composites;
Chalchogenides;
Semiconductivity;
X-ray diffraction;
Thermoelectrics;
BISMUTH-ANTIMONY-TELLURIDE;
THERMAL-CONDUCTIVITY;
PERFORMANCE;
ENHANCEMENT;
BI2TE3;
FIGURE;
MERIT;
D O I:
10.1016/j.materresbull.2021.111517
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The thermoelectric properties of co-doped (Bi0.98In0.02)(2)Te2.7Se0.3/reduced graphene oxide composites between 10 - 325 K are presented. X-ray diffraction confirms that the composites adopt a rhombohedral structure with space group R (3) over barm. Field emission scanning electron microscopy reveals an interface structure of reduced graphene oxide (rGO). N-type conducting behaviour is observed for all the samples, as ascertained by Hall effect and Seebeck coefficient measurements, with a carrier concentration of 10(25)/m(3). The thermal conductivity and electrical resistivity of (Bi0.98In0.02)(2)Te2.7Se0.3/0.02 wt% reduced graphene oxide composite is found to decrease by 1.6 and 10 times respectively in comparison with that of (Bi0.98In0.02)(2)Te2.7Se0.3. The power factor is enhanced by 7 times for (Bi0.98In0.02)(2)Te2.7Se0.3/0.01 wt% rGO compared to that of (Bi0.98In0.02)(2)Te2.7Se0.3.
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页数:13
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